Ms. Fuhui Shao Profile

Fuhui Shao

at Institute of Semiconductors CAS

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Author

Publications (5)

Proceedings Article | 17 May 2019 Paper

Micro-stripe broad-area infrared diode lasers without deterioration of output power

Sheng-wen Xie, Zhi-chuan Niu, Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Yu Zhang, Ying-qiang Xu

Proceedings Volume 11170, 111700Q (2019) https://doi.org/10.1117/12.2532478

KEYWORDS: Semiconductor lasers, Infrared radiation, Infrared lasers, Laser damage threshold, Continuous wave operation, Semiconductors, High power lasers, Semiconducting wafers, Etching, Optoelectronics

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Proceedings Article | 17 May 2019 Paper

1.2-um InAs/GaAs high-density quantum dot laser

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hai-Qiao Ni, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11170, 1117014 (2019) https://doi.org/10.1117/12.2532696

KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Chemical species, Quantum dot lasers, Semiconductors, Semiconductor lasers, Waveguides, Silicon, Cladding

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Proceedings Article | 24 January 2019 Paper

Wavelength tuning of type-II “W” quantum well of interband cascade laser

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11052, 110520L (2019) https://doi.org/10.1117/12.2521757

KEYWORDS: Indium arsenide, Quantum wells, Arsenic, Antimony, Wavelength tuning, Luminescence, Continuous wave operation, Gallium antimonide, Atomic force microscopy

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Proceedings Article | 24 January 2019 Paper

Single-mode distributed Bragg reflector lasers at 2.08 μm

Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11052, 110520M (2019) https://doi.org/10.1117/12.2521766

KEYWORDS: Semiconductor lasers, Distributed Bragg reflectors, Gallium antimonide, Epitaxy, Bragg gratings, Continuous wave operation, Waveguides, Arsenic, Antimony, Gallium

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Proceedings Article | 24 January 2019 Paper

1.3um InAs/InGaAs QD laser steady output power over 1.07W

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, Zhi-Chuan Niu

Proceedings Volume 11052, 1105212 (2019) https://doi.org/10.1117/12.2521947

KEYWORDS: Quantum dots, Gallium arsenide, Plasma enhanced chemical vapor deposition, Reactive ion etching, Laser marking, Semiconductors, Molecular beam epitaxy, Semiconductor lasers, Continuous wave operation, Gallium

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