Prof. Evelyne Gil Profile

Prof. Evelyne Gil

at Univ Blaise Pascal

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 7 December 2013 Paper

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Yamina André, Agnès Trassoudaine, Geoffrey Avit, Kaddour Lekhal, Mohammed Ramdani, Christine Leroux, Guillaume Monier, Christelle Varenne, Philip Hoggan, Dominique Castelluci, Catherine Bougerol, François Réveret, Joël Leymarie, Elodie Petit, Vladimir G. Dubrovskii, Evelyne Gil

Proceedings Volume 8923, 89230O (2013) https://doi.org/10.1117/12.2035485

KEYWORDS: Gallium arsenide, Gallium nitride, Crystals, Gallium, Silicon, Liquids, Scanning electron microscopy, Solids, Adsorption, Nanowires

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Proceedings Article | 25 February 2004 Paper

Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?

Evelyne Gil-Lafon, Agnes Trassoudaine, Dominique Castelluci, Alberto Pimpinelli, Rachida Saoudi, Olivier Parriaux, Alain Muravaud, Claire Darraud

Proceedings Volume 5250, (2004) https://doi.org/10.1117/12.513376

KEYWORDS: Gallium arsenide, Crystals, Scanning electron microscopy, Etching, Diffusion, Molecules, Photonic crystals, Gallium, Photomasks, Reactive ion etching

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Proceedings Article | 1 March 1991 Paper

Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy

Henri Banvillet, E. Gil-Lafon, A. Vasson, R. Cadoret, A. Tabata, Taha Benyattou, Gerard Guillot

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24324

KEYWORDS: Luminescence, Quantum wells, Vapor phase epitaxy, Indium arsenide, Interfaces, Etching, Optoelectronic devices, Lead, Thermodynamics, Information operations

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