This contribution discusses the role of hexagonal Boron Nitride (hBN) as a host for photon emitters. In this study we employ gallium ion implantation to create emitters within hBN. Gallium ions are found to be optimal for generating many emitters, when both the ion energy and fluence are carefully controlled. Post-irradiation thermal annealing induces defect transmutation, providing spectral tunability to the emitters. Together with Focused Ion Beam (FIB) implantation, allowing for nanoscale defect positioning, it is possible to precisely pattern multiple photon emitters at various optical frequencies on one platform. Overall, the research highlights hBN potential in advancing quantum technologies.
Quantum emitters in hexagonal boron nitride (hBN) crystals are optimal candidates for the observation of single photon emission, but achieving control over their features is a challenging task. In this work, we present the deterministic generation of emitters with selected position and spectral features with a method that combines ion implantation and annealing of the sample. With this method, we even achieved control over the density of emitters. Such control is a fundamental step towards the engineering of emitter ensembles that can be readily embedded in Van der Waals heterostructures and advanced quantum systems.
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