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Dmitriy A. Popov
at MIEM NRU HSE
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Publications (1)
Proceedings Article | 15 March 2019 Paper
Modeling of the submicron MOSFETs characteristics for UTSi technology
A. Adonin, K. Petrosyants, D. Popov
Proceedings Volume 11022, 110220G (2019) https://doi.org/10.1117/12.2522082
KEYWORDS: Field effect transistors, Silicon, Transistors, Manufacturing, Doping, Structural design, Semiconductors, Dielectrics, Passive elements, Aluminum
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