Prof. Czeslaw Skierbiszewski Profile

Prof. Czeslaw Skierbiszewski

Professor at Institute of High Pressure Physics

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Author

Publications (16)

Proceedings Article | 9 March 2024 Presentation

Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC1288619 (2024) https://doi.org/10.1117/12.3002699

KEYWORDS: Light emitting diodes, Indium gallium nitride, Molecular beam epitaxy, Quantum wells, Gallium nitride, Vapor phase epitaxy, Quantum physics, Internal quantum efficiency, Indium

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Proceedings Article | 9 March 2024 Presentation

Fabrication method of GaN-air channels for embedded photonic structures

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC128860X (2024) https://doi.org/10.1117/12.3001341

KEYWORDS: Fabrication, Refractive index, Electrochemical etching, Diffraction gratings, Silicon, Ion channels, Gallium nitride, Annealing, Semiconductor lasers, Optical lithography

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Proceedings Article | 21 March 2023 Presentation

Properties of III-nitride wide quantum wells and their application to optoelectronic devices

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Henryk Turski, Tadek Suski, Witold Trzeciakowski, Czeslaw Skierbiszewski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650094

KEYWORDS: Quantum wells, Optoelectronic devices, Physics, Indium gallium nitride, Semiconductors, Semiconductor lasers, Photonics, Optoelectronics, Light emitting diodes

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Proceedings Article | 21 March 2023 Presentation

Properties of implanted InGaN micro-LEDs with tunnel junctions

Julia Slawinska, Greg Muziol, Mikolaj Zak, Anna Kafar, Czeslaw Skierbiszewski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650014

KEYWORDS: Light emitting diodes, Indium gallium nitride, Quantum wells, Ion implantation, Gallium nitride, Wafer-level optics, Semiconducting wafers, Molecular beam epitaxy, Laser crystals, Ions

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Proceedings Article | 14 March 2023 Presentation

Tunnel junctions for new architecture of III-N devices (Conference Presentation)

Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak

Proceedings Volume PC12441, PC124410J (2023) https://doi.org/10.1117/12.2649797

KEYWORDS: Light emitting diodes, Hydrogen, Wavelength tuning, Vapor phase epitaxy, Semiconductor lasers, Resistance, Polishing, Plasma, Molecular beam epitaxy, Magnesium

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Proceedings Article | 9 March 2022 Presentation

Next-generation of III-nitride light emitters based on buried tunnel junction design

Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len van Deurzen, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume PC12022, PC120220G (2022) https://doi.org/10.1117/12.2608281

KEYWORDS: Solid state electronics, Polarization, Lead, Heterojunctions, Gallium nitride, Electrons

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Proceedings Article | 5 March 2022 Presentation

InGaN blue light-emitting micro-diodes with current path defined by tunnel junction

Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muziol, Czeslaw Skierbiszewski, Szymon Grzanka, Anna Kafar, Piotr Perlin, Stephen Najda, Tadeusz Suski, Lucja Marona

Proceedings Volume PC12001, PC120010Z (2022) https://doi.org/10.1117/12.2609763

KEYWORDS: Light emitting diodes, Indium gallium nitride, Optoelectronics, Display technology, LCDs, Etching

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Proceedings Article | 16 February 2020 Presentation + Paper

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

Henryk Turski, Shyam Bharadwaj, Marcin Siekacz, Grzegorz Muziol, Mikolaj Chlipala, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Szymon Stanczyk, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume 11280, 1128010 (2020) https://doi.org/10.1117/12.2548996

KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductor lasers, Continuous wave operation, Quantum wells, Indium gallium nitride, Molecular beam epitaxy

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Proceedings Article | 27 March 2013 Paper

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig Wasilewski, Sylwester Porowski, Czesław Skierbiszewski

Proceedings Volume 8625, 862527 (2013) https://doi.org/10.1117/12.2003850

KEYWORDS: Indium, Indium gallium nitride, Nitrogen, Gallium, Chemical species, Gallium nitride, Crystals, Indium nitride, Molecular beam epitaxy, Diffusion

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Proceedings Article | 4 March 2013 Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski

Proceedings Volume 8625, 862512 (2013) https://doi.org/10.1117/12.2001997

KEYWORDS: Gallium nitride, Indium gallium nitride, Semiconductor lasers, Plasma, Waveguides, Quantum wells, Cladding, Nitrogen, Diodes

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Proceedings Article | 17 February 2011 Paper

Plasmonic cladding InGaN MQW laser diodes

P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski

Proceedings Volume 7953, 79530I (2011) https://doi.org/10.1117/12.873929

KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Plasmonics, Refractive index, Indium gallium nitride, Nitrogen, Waveguides, Plasma, Molecular beam epitaxy

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Proceedings Article | 8 February 2007 Paper

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

T. Swietlik, C. Skierbiszewski, R. Czernecki, G. Franssen, P. Wisniewski, M. Leszczynski, I. Grzegory, P. Mensz, T. Suski, P. Perlin

Proceedings Volume 6473, 64731E (2007) https://doi.org/10.1117/12.700652

KEYWORDS: Gallium, Gallium nitride, Luminescence, Semiconductor lasers, Quantum wells, Aluminum, Optical properties, Plasma, Waveguides, Photons

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Proceedings Article | 3 March 2006 Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski

Proceedings Volume 6121, 612109 (2006) https://doi.org/10.1117/12.646014

KEYWORDS: Aluminum, Quantum wells, Gallium nitride, Absorption, Indium, Telecommunications, Polishing, Plasma, Molecular beam epitaxy, Superlattices

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Proceedings Article | 12 October 2005 Paper

Potential of MBE for gallium nitride based lasers

S. Porowski, C. Skierbiszewski

Proceedings Volume 5958, 59580Z (2005) https://doi.org/10.1117/12.622908

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Gallium, Quantum wells, Optoelectronic devices, Aluminum, Semiconductors, Doping, Interfaces

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Proceedings Article | 11 May 2004 Paper

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Piotr Perlin, Mike Leszczynski, Pawel Prystawko, Robert Czernetzki, Przemek Wisniewski, Janusz Weyher, Grzegorz Nowak, Jola Borysiuk, Lucja Gorczyca, Tomasz Swietlik, Gijs Franssen, Agata Bering, Czeslaw Skierbiszewski, Izabella Grzegory, Tadek Suski, Sylwester Porowski

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.523580

KEYWORDS: Gallium nitride, Crystals, Semiconductor lasers, High power lasers, Diodes, Sapphire, Gallium, Temperature metrology, Mirrors, Etching

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Proceedings Article | 17 April 2001 Paper

Epitaxy on GaN bulk crystals

M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, Piotr Perlin, P. Wisniewski, Cz. Skierbiszewski, T. Suski, G. Nowak, Fouad Karouta, J. Holst, I. Grzegory, S. Porowski

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425412

KEYWORDS: Gallium nitride, Crystals, Metalorganic chemical vapor deposition, X-ray diffraction, Sapphire, Epitaxy, Luminescence, Reflectivity, Single crystal X-ray diffraction, Atomic force microscopy

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Showing 5 of 16 publications

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