Mr. Anthony R. Schepis Profile

Anthony R. Schepis

Process Engineer at TEL

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Publications (7)

Proceedings Article | 17 April 2014 Paper

Study of angular effects for optical systems into the EUV

Andrew Burbine, Zac Levinson, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482N (2014) https://doi.org/10.1117/12.2046488

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Nanoimprint lithography, Refractive index, Diffraction, EUV optics, Reflectivity, Absorption, Optics manufacturing

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Proceedings Article | 17 April 2014 Paper

Optimization of image-based aberration metrology for EUV lithography

Zac Levinson, Germain Fenger, Andrew Burbine, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482M (2014) https://doi.org/10.1117/12.2046483

KEYWORDS: Metrology, Monochromatic aberrations, Wavefronts, Extreme ultraviolet lithography, Nanoimprint lithography, Diffraction, Lithography, Detection and tracking algorithms, Photomasks, Extreme ultraviolet

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Proceedings Article | 31 March 2014 Paper

Computational lithography platform for 193i-guided directed self-assembly

Kafai Lai, Melih Ozlem, Jed Pitera, Chi-chun Liu, Anthony Schepis, Daniel Dechene, Azalia Krasnoperova, Daniel Brue, Jassem Abdallah, Hsinyu Tsai, Mike Guillorn, Joy Cheng, Gregory Doerk, Melia Tjio, Rasit Topalogu, Moutaz Fakhry, Neal Lafferty

Proceedings Volume 9052, 90521A (2014) https://doi.org/10.1117/12.2046920

KEYWORDS: 3D modeling, Monte Carlo methods, Computational lithography, Photomasks, Critical dimension metrology, Lithography, Photoresist processing, Instrument modeling, Optical lithography, Directed self assembly

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Proceedings Article | 31 March 2014 Paper

Alternative method for variable aspect ratio vias using a vortex mask

Anthony Schepis, Zac Levinson, Andrew Burbine, Bruce Smith

Proceedings Volume 9052, 90521M (2014) https://doi.org/10.1117/12.2046495

KEYWORDS: Photomasks, Lithography, Spiral phase plates, Optical lithography, Fiber optic illuminators, Critical dimension metrology, Electroluminescence, Chemical elements, Phase shifts, Optical vortices

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Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this range is ultimately dictated by pitch employed.

Proceedings Article | 28 March 2014 Paper

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

Chi-Chun Liu, Cristina Estrada-Raygoza, Hong He, Michael Cicoria, Vinayak Rastogi, Nihar Mohanty, Hsinyu Tsai, Anthony Schepis, Kafai Lai, Robin Chao, Derrick Liu, Michael Guillorn, Jason Cantone, Sylvie Mignot, Ryoung-Han Kim, Joy Cheng, Melia Tjio, Akiteru Ko, David Hetzer, Mark Somervell, Matthew Colburn

Proceedings Volume 9049, 904909 (2014) https://doi.org/10.1117/12.2046462

KEYWORDS: Etching, Silicon, Polymethylmethacrylate, Semiconducting wafers, Scatterometry, Image processing, 3D modeling, Line edge roughness, Defect detection, Directed self assembly

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Proceedings Article | 12 April 2013 Paper

Computational aspects of optical lithography extension by directed self-assembly

Kafai Lai, Chi-chun Liu, Jed Pitera, Daniel Dechene, Anthony Schepis, Jassem Abdallah, Hsinyu Tsai, Mike Guillorn, Joy Cheng, Gregory Doerk, Melia Tjio, Charles Rettner, Olalekan Odesanya, Melih Ozlem, Neal Lafferty

Proceedings Volume 8683, 868304 (2013) https://doi.org/10.1117/12.2012440

KEYWORDS: Photomasks, Optical lithography, Lithography, Optical proximity correction, Source mask optimization, 3D modeling, Extreme ultraviolet, Semiconducting wafers, Data modeling, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Directed self-assembly process implementation in a 300mm pilot line environment

Chi-Chun Liu, I. Cristina Estrada-Raygoza, Jassem Abdallah, Steven Holmes, Yunpeng Yin, Anthony Schepis, Michael Cicoria, David Hetzer, Hsinyu Tsai, Michael Guillorn, Melia Tjio, Joy Cheng, Mark Somervell, Matthew Colburn

Proceedings Volume 8680, 86801G (2013) https://doi.org/10.1117/12.2011610

KEYWORDS: Critical dimension metrology, Etching, Line width roughness, Semiconducting wafers, Optical lithography, Lithography, Chemical reactions, Photoresist processing, Polymethylmethacrylate, Directed self assembly

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Showing 5 of 7 publications

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