KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Line width roughness, Signal to noise ratio, Deep ultraviolet, Scanning electron microscopy, Critical dimension metrology, Extreme ultraviolet lithography
Deep Ultra Violet (DUV) inspection of Extreme Ultra Violet (EUV) mask has been known for high stability, high throughput, and low cost, since it has been used for a long time, even though sensitivity is thought to be insufficient for the EUV mask of under 20 nm half pitch (hp). We have been studying extendibility for 1X nm hp of the DUV inspection using optics named Super Inspection Resolution Improvement method for UnreSolved pattern (SIRIUS). In previous study, we demonstrated the DUV inspection has capability for the EUV mask of 17 nm hp Lines and Spaces (LS) on wafer. In this paper, the more extendibility for the DUV inspection of EUV masks under sub-15 nm on wafer was demonstrated by studying relationship of roughness and sensitivity. Firstly, an estimated model for effects of the EUV mask roughness to Signal Noise Ratio (SNR) of the inspection image was established, and simulation was carried out. Secondly, the SNR was evaluated using actual Line Width Roughness (LWR) improved masks. It was confirmed that the results are the same trend as the model and the simulation, and, the SNR is enhanced with the LWR improvement. Finally, the sensitivity of the LWR improved mask was evaluated. As a result, it becomes enough for the EUV mask over 13 nm hp on wafer. In conclusion, we confirm that the DUV inspection of the EUV mask by the SIRIUS can be extending to the 13 nm hp LS on wafer, this is around the limit of NA 0.33 EUV lithography, using the LWR improved mask.
Recently, much attention has been paid on nanoimprint lithography (NIL) because of its capability for fabricating device
at a low cost without multiple patterning. It is considered as a candidate for next generation lithography technology. NIL
is one to one lithography and contact transfer technique using template. Therefore, the lithography performance depends
greatly on the quality of the template pattern. And there are some challenges to be solved for defect repair of template
because pattern size of template is as same as that of wafer.
In order to realize the defect repair of template using electron beam (EB) repair tools, it is necessary to control the EB
irradiated area and dose amount of EB repair process more accurately. By optimizing these conditions, EB repair process
for template has been improved.
In this paper, we evaluated etching repair of a master template and the imprinting to replica. Programmed missing defects
on master template were repaired by changing parameters of EB repair tool. It was confirmed that the relationship of
critical dimension (CD) and depth of etching repair process for master template and the influence on replica imprinting.
As a result, the repair process for master template with hole pattern enables the corresponding CD error of the replica
template to be less than ±10% of the target CD.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.