2D materials ,
graphene ,
supercapacitors ,
energy storage devices
Profile Summary
I am a Ph.D. student at IIT Bombay, India. I am working on 2D materials' characterization, and applications to super-capacitor and energy storage devices.
Publications (5)
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Vanadium disulfide (VS2), which belongs to transition metal dichalcogenides (TMDs) group, is a prominent material for energy storage application. On the other hand, graphene like carbon-based nanomaterials offer improved electrochemical performance due to high specific surface area, excellent conductivity, good chemical, and mechanical stability. Therefore, composite of graphene like material with TMD have shown better electrochemical performance till date. In this work, we have synthesized VS2/N-rGO composite material, which can be applicable for energy storage device. At first, we have synthesized graphene oxide (GO) using Tour method. Then we reduced GO along with nitrogen doping using hydrothermal route. After that, we have synthesized VS2/N-rGO by hydrothermal method. The X-ray diffraction (XRD) spectrum of GO shows a prominent peak at 10.2°, which implies the interlayer spacing in GO of 8.7 Å. After reduction and doping with nitrogen (N), two peaks are obtained at 24.7° (d = 3.6 Å), and 42.3° (d = 2.1 Å) in the XRD pattern which corresponds to N-rGO. RAMAN spectrum of composite shows the characteristics peaks of VS2 at 141.6, 194.5, 286.4, 404.1, 680.1 and 997.2 cm-1 along with D and G bands coming from the N-rGO. We have also performed the Fourier-transform infrared-spectroscopy (FTIR) and Field-emission gun-scanning electron-microscopy (FEG-SEM) characterizations to investigate the bonding vibration and surface morphology of the materials. The synthesized material is suitable for energy storage applications.
Tungsten oxide (WO3), which is also known as tungsten trioxide and wide band gap semiconductor material has drawn enormous attention among researchers due to its fascinating properties. Using facile one step hydrothermal method, the synthesis and characterizations of highly crystalline 1D nanorod of WO3 are presented in this paper with large scale production of the material. Several characterization techniques, such as transmission electron microscopy (TEM), field emission gun-scanning electron microscopy (FEG-SEM), X-ray diffraction (XRD), UV-vis spectroscopy have been employed to check the crystallinity, surface morphology, shape, and band gap of the nanomaterial. The XRD data confirms about the highly crystalline hexagonal phase of WO3, which agrees well with the JCPDS card no – 01-085- 2459. Nanorod like morphology can be seen in the low-resolution TEM image. In the HRTEM image, the highly crystalline nature of the material is clearly visible and the obtained interplanar spacing is 0.38 nm which matches with the interplanar spacing of (002) plane. The FEG-SEM image shows the 1D nanorod morphology of the synthesized material. The diameters of the nanorods are in the range of 50-300 nm. The Fourier transform infrared spectroscopy (FTIR) revels the structural information about the synthesized material. The broad peak around 805 cm-1 is attributed to the W-O-W bond stretching vibration. Two other peaks appeared at 1405 and 1628 cm-1 are representing the vibration mode of W-OH bond. We have also studied the UV-vis absorption spectroscopy of the WO3 nanorod to investigate the light absorption property of the material. The band gap obtained from the Tauc plot is 3.16 eV, indicates the wide and direct band gap formation of WO3 nanorod. The synthesized material is suitable for various applications, such as gas sensing, UV photodetector, supercapacitor, and photocatalyst.
Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials which has several applications in the domain of optoelectronic devices, catalyst, sensor, and energy storage devices. Tungsten disulfide (WS2) is one of the important TMD material exhibiting semiconducting and metallic nature in the 2H and 1T phases respectively. Herein, we report a one-step hydrothermally synthesized large-scale and low-cost WS2 nanomaterial. Further, we have performed material characterization using X-ray diffraction (XRD), field emission gun-scanning electron microscopy (FEG-SEM), and transmission electron microscopy (TEM) to check the crystallinity, surface morphology, and shape of the nanomaterial. The XRD data matches very well with the mixed-phase 1T @ 2H of WS2. Also, the formation of crystal planes can be clearly seen from the high-resolution transmission electron microscopy (HRTEM) image of the synthesized material. Further, the surface morphology of as-grown WS2 nanomaterial has been investigated by field emission gunscanning electron microscopy (FEG-SEM) which shows the nanosheet-like morphology. Moreover, Raman spectroscopy has been done to check the presence of vibrational modes of the synthesized WS2. The Raman peaks were observed at 348.15 cm-1(E1 2g) and 414.18 cm-1 (A1g) corresponding to the in-plane vibrational mode and out-of-plane vibrational mode of 2H WS2. In addition, Raman peaks corresponding to the 1T phase of WS2 have also been obtained. This rigorous study on WS2 nanomaterial suggests its usefulness in energy storage applications such as supercapacitors, photocatalysis, and electrochemical sensors.
Vanadium disulfide (VS2) is a prominent metallic member of transition metal dichalcogenides (TMDs) family and has already demonstrated its flair in energy storage device applications such as supercapacitors and batteries. In this work, we have synthesized hexagonal shape VS2 nanomaterial using a facile one step hydrothermal route and investigated the phase, morphology and structural properties of the material. The formation of phase has been confirmed from the X-ray diffraction (XRD) plot by correlating with the database of Joint Committee on Powder Diffraction Standards (JCPDS) 00-036-1139 of 1T VS2. Further, the crystalline behavior of VS2 nanomaterial can be seen from the high resolution transmission electron microscopy (HRTEM) measurement. Moreover, the morphology of the synthesized material is obtained from the field emission gun-scanning electron microscopy (FEG-SEM). Also, the characteristic Raman peaks of 1T VS2 at 140.3 cm-1 and 192.3 cm-1 have been observed from the Raman spectrum indicating the metallic behavior of synthesized material. The peak at 281.8 cm-1 is attributed to the in-plane vibrational mode (E2g1) while the peak at 404.5 cm-1 represents the out-of-plane vibrational mode (A1g) of V-S bond. The Fourier transform infrared (FTIR) spectrum shows the V-S-V and V=S vibrational modes around 534 cm-1 and 982 cm-1 respectively. The study introduces a low cost, large scale, highly crystalline, and metallic VS2 nanomaterial with potential application for next generation supercapacitors and other energy storage devices.
Transition metal dichalcogenides (TMDs) are highly efficient materials due to their vast applications in the domain of optoelectronics, photodetectors, catalysis, supercapacitors, and battery storage. Molybdenum disulfide (MoS2) is the most important TMD material due to the existence of fascinating optical, electronic, and chemical properties. Herein, we have synthesized MoS2 using a facile one-step hydrothermal technique resulting in low-cost 1T@2H MoS2 flower-like nanosheets and examined the structural, electronic, and optical properties. The field emission gun-scanning electron microscopy (FEG-SEM) images confirm the flower-like nanosheet morphology of the synthesized MoS2. Further, the Xray diffraction (XRD) peaks of MoS2 confirm the hexagonal phase with space group P63/mmc. The observed Transmission Electron Microscopy (TEM) image shows the formation of thin nanosheets of MoS2 while the crystal planes of MoS2 can be noticed from the High-Resolution Transmission Electron Microscopy (HRTEM) images. Also, an interplanar distance (d) of 0.62 nm has been observed from the HRTEM images of MoS2 nanosheets. The Raman spectrum confirms the vibrational modes corresponding to the 2H and 1T phase of MoS2 indicating the formation of a mixed phase in the structure. An excellent luminescent behavior has been observed from the photoluminescence (PL) plot. The electronic nature of the material has been evaluated from the Tauc plot and an optical band gap of 1.69 eV has been observed indicating the formation of a few layers of semiconducting MoS2. This rigorous study suggests the potential application of MoS2 in nanoelectronic devices.
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