Near-infrared (1 to 4  μm) control of plasmonic resonance wavelength in Ga-doped ZnO

David C. Look; Kevin D. Leedy; Gordon J. Grzybowski; Bruce B. Claflin

doi:10.1117/1.OE.56.5.057109

22 May 2017 Near-infrared (1 to 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO

David C. Look, Kevin D. Leedy, Gordon J. Grzybowski, Bruce B. Claflin

Author Affiliations +

Optical Engineering, Vol. 56, Issue 5, 057109 (May 2017). https://doi.org/10.1117/1.OE.56.5.057109

Abstract

The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy range, E=6.7 to 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is t

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David C. Look, Kevin D. Leedy, Gordon J. Grzybowski, and Bruce B. Claflin "Near-infrared (1 to 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO," Optical Engineering 56(5), 057109 (22 May 2017). https://doi.org/10.1117/1.OE.56.5.057109

Received: 8 March 2017; Accepted: 1 May 2017; Published: 22 May 2017

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