27 July 2015 Wideband 20-wavelength 1.3-μm distributed feedback semiconductor laser array using common holographic exposure
Linlin Lu, Renjia Guo, Rui Liu, Xuqi Chen, Hao He, Lianyan Li
Author Affiliations +
Abstract
The first experimental realization of a 20-wavelength distributed feedback semiconductor laser array with a λ/4 equivalent phase shift using common holographic exposure in the 1.3-μm wavelength domain is reported. It shows very good linearity in lasing wavelengths with a deviation from −0.5 to 0.45 nm. The threshold currents are between 13 and 17 mA. The side mode suppression ratios are all larger than 40 dB under the bias currents of 70 mA. The slope efficiencies at room temperature are all about 0.4  W/A. However, it only changes the micrometer-level sampling structures while the seed grating is uniform. Therefore, its fabrication cost is low.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286 /2015/$25.00 © 2015 SPIE
Linlin Lu, Renjia Guo, Rui Liu, Xuqi Chen, Hao He, and Lianyan Li "Wideband 20-wavelength 1.3-μm distributed feedback semiconductor laser array using common holographic exposure," Optical Engineering 54(7), 076108 (27 July 2015). https://doi.org/10.1117/1.OE.54.7.076108
Published: 27 July 2015
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KEYWORDS
Semiconductor lasers

Holography

Phase shifts

Temperature metrology

Laser damage threshold

Lutetium

Optical engineering

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