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10 January 2014 Thermal damages on the surface of a silicon wafer induced by a near-infrared laser
Sungho Choi, Kyung-Young Jhang
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Optical Engineering, Vol. 53, Issue 1, 017103 (January 2014). https://doi.org/10.1117/1.OE.53.1.017103
Abstract
Laser-induced thermal damages of a silicon wafer surface subjected to continuous near-infrared laser irradiation were investigated. Silicon wafer specimens were illuminated by a continuous-wave fiber laser beam (1070-nm wavelength) with irradiances from 93 to 186  W/cm2 , and the surface morphology of each specimen was analyzed using optical microscopy. With increasing irradiance, straight cracks in the <110< direction appeared first, and partial melting and complete melting were subsequently observed. The mechanism of these laser-induced thermal damages in the silicon wafer surface was discussed with numerical analysis based on the heat transfer and thermoelasticity model. The irradiances initiating the cracking and melting were predicted by determining the irradiances in which the calculated thermal stress and temperature exceeded the corresponding limits of the fracture strength and melting point, respectively. These predictions agreed well with the experimental findings. Laser-induced thermal damages of the silicon wafer surface subjected to a continuous near-infrared laser irradiation were identified based on these investigations.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Sungho Choi and Kyung-Young Jhang "Thermal damages on the surface of a silicon wafer induced by a near-infrared laser," Optical Engineering 53(1), 017103 (10 January 2014). https://doi.org/10.1117/1.OE.53.1.017103
Published: 10 January 2014
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Cited by 14 scholarly publications.
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KEYWORDS
Silicon
Semiconductor lasers
Semiconducting wafers
Absorption
Continuous wave operation
Laser irradiation
Laser induced damage
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