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1 September 2006 Unselective regrowth of 1.5-µm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers
Wen Feng, Y. Ding, Jiaoqing Pan, Lingjuan Zhao, Hongliang Zhu, Wei Wang
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Optical Engineering, Vol. 45, Issue 9, 090501 (September 2006). https://doi.org/10.1117/1.2355658
Abstract
Unselective regrowth for fabricating 1.5-µm InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow linewidth of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers.
©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
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Wen Feng, Y. Ding, Jiaoqing Pan, Lingjuan Zhao, Hongliang Zhu, and Wei Wang "Unselective regrowth of 1.5-µm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers," Optical Engineering 45(9), 090501 (1 September 2006). https://doi.org/10.1117/1.2355658
Published: 1 September 2006
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KEYWORDS
Heterojunctions
Laser development
Quantum efficiency
Etching
Dielectrics
Fiber lasers
Laser damage threshold
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