Theoretical analysis of Si1–x–yGexCy near-infrared photodetectors

Baojun Li; Soojin Chua; Eugene A. Fitzgerald

doi:10.1117/1.1578085

1 July 2003 Theoretical analysis of Si_1–x–yGe_xC_y near-infrared photodetectors

Baojun Li, Soojin Chua, Eugene A. Fitzgerald

Optical Engineering, Vol. 42, Issue 7, (July 2003). https://doi.org/10.1117/1.1578085

A near-infrared waveguide photodetector in a Si-based ternary Si_1–x–yGe_xC_y alloy is analyzed theoretically and the simulation results are obtained for 0.85- to 1.06-μm wavelength fiber optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si_0.79Ge_0.2C_0.01 and Si_0.70Ge_0.28C_0.02 are designed. The active absorption layer has a thickness of 120 to 450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 μm.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Baojun Li, Soojin Chua, and Eugene A. Fitzgerald "Theoretical analysis of Si_1–x–yGe_xC_y near-infrared photodetectors," Optical Engineering 42(7), (1 July 2003). https://doi.org/10.1117/1.1578085

Published: 1 July 2003

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