Relative importance of various stochastic terms and EUV patterning

Patrick Naulleau; Gregg Gallatin

doi:10.1117/1.JMM.17.4.041015

4 October 2018 Relative importance of various stochastic terms and EUV patterning

Patrick Naulleau, Gregg Gallatin

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 17, Issue 4, 041015 (October 2018). https://doi.org/10.1117/1.JMM.17.4.041015

Abstract

An error propagation stochastic model is described and used to study the impact of both photon and photoresist material sources of line-width roughness (LWR). Based on typical chemically amplified resist parameters, material sources of LWR are shown to be of equal importance to photon sources. Of the material sources, quencher is shown to be the most important input noise term. The results show that it is not the relative quencher noise that ultimately matters but rather the absolute quencher noise relative to the mean produced acid count. The results also show that chemical yield is critical and that benefiting from increased absorptivity also requires the chemical yield to be maintained.

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Patrick Naulleau and Gregg Gallatin "Relative importance of various stochastic terms and EUV patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 17(4), 041015 (4 October 2018). https://doi.org/10.1117/1.JMM.17.4.041015

Received: 19 June 2018; Accepted: 7 September 2018; Published: 4 October 2018

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