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27 July 2015 Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack–Hartmann wavefront sensor accuracy
Alastair G. Basden
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Journal of Astronomical Telescopes, Instruments, and Systems, Vol. 1, Issue 3, 039002 (July 2015). https://doi.org/10.1117/1.JATIS.1.3.039002
Abstract
In recent years, detectors with subelectron readout noise have been used very effectively in astronomical adaptive optics systems. Here, we compare readout noise models for the two key faint flux level detector technologies that are commonly used: electron multiplying charge coupled device (EMCCD) and scientific CMOS (sCMOS) detectors. We find that in almost all situations, EMCCD technology is advantageous, and that the commonly used simplified model for EMCCD readout is appropriate. We also find that the commonly used simple models for sCMOS readout noise are optimistic, and we recommend that a proper treatment of the sCMOS root mean square readout noise probability distribution should be considered during instrument performance modeling and development.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Alastair G. Basden "Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack–Hartmann wavefront sensor accuracy," Journal of Astronomical Telescopes, Instruments, and Systems 1(3), 039002 (27 July 2015). https://doi.org/10.1117/1.JATIS.1.3.039002
Published: 27 July 2015
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Cited by 12 scholarly publications.
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KEYWORDS
Electron multiplying charge coupled devices
Sensors
Performance modeling
Instrument modeling
Systems modeling
Stochastic processes
Photons
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