Reconfigurable optical devices are key for enhancing optical interconnects, switching, and memory. Achieving high modulation depth with low voltage in the near-infrared (NIR) range remains challenging. This study introduces an electrically switchable device combining Tamm plasmon and PEDOT:PSS, achieving over 88% optical modulation across the NIR range with just ±1 V, compatible with CMOS technology. It works by adjusting charge carrier density through electrochemical doping/dedoping. This device also supports non-volatile multi-memory states, enabling rewritable optical memory and showing neuromorphic behavior, promising for free-space communication and imaging.
|