A novel synaptic transistor with cross-linked PVP gate insulator and ZnON channel for neuromorphic applications

Su-Kyung Kim; Tae-Yeon Seong

doi:10.1117/12.3016965

19 June 2024 A novel synaptic transistor with cross-linked PVP gate insulator and ZnON channel for neuromorphic applications

Su-Kyung Kim, Tae-Yeon Seong

Author Affiliations +

Proceedings Volume PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV; PC1301314 (2024) https://doi.org/10.1117/12.3016965
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Conference Poster

Abstract

We have developed a new type of transistor that can mimic the functions and behaviors of biological synapses, which are the connections between neurons in the brain. Our transistor has a special polymer layer of cross-linked poly-4-vinyl phenol (PVP), which can form electric-double-layers (EDL) with high capacitance. This layer allows us to control the synaptic weight and the learning ability of our transistor by applying different gate voltages. We also used zinc oxynitride for the channel, which have higher mobility than oxide materials. Unlike conventional memristors, our transistors can perform signal transmission and learning functions simultaneously. It can also emulate a variety of synaptic behaviors such as excitatory postsynaptic current, paired-pulse facilitation, long-term memory, and filtering capability. Our transistor is a promising device for artificial intelligence systems that require brain-like computing.

Citation Download Citation

Su-Kyung Kim and Tae-Yeon Seong "A novel synaptic transistor with cross-linked PVP gate insulator and ZnON channel for neuromorphic applications", Proc. SPIE PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV, PC1301314 (19 June 2024); https://doi.org/10.1117/12.3016965

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