PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
To enhance the singlet-to-triplet occupation ratio and boost radiative recombination in organic semiconductors, several schemes exist to inject charge carriers with a high degree of spin polarization. So far, the electrical current flowing across the ferromagnetic 3d metal/molecule interface has been shown to exhibit a maximum spin polarization P = 74% at 10K. Yet applications require a higher P and at room temperature, using a simple 3d metal. We will present magnetotransport results showing P=89% at T=40K across the Fe/C60 interface, and P=77% at 295K across the facile Co/C interface. These new records highlight the potential of this class of spin injectors for organic optoelectronics.
Martin Bowen
"Record transport spin polarization across ferromagnetic metal/molecule interfaces", Proc. SPIE PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV, PC130130F (19 June 2024); https://doi.org/10.1117/12.3021052
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Martin Bowen, "Record transport spin polarization across ferromagnetic metal/molecule interfaces," Proc. SPIE PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV, PC130130F (19 June 2024); https://doi.org/10.1117/12.3021052