Presentation
19 June 2024 Record transport spin polarization across ferromagnetic metal/molecule interfaces
Martin Bowen
Author Affiliations +
Abstract
To enhance the singlet-to-triplet occupation ratio and boost radiative recombination in organic semiconductors, several schemes exist to inject charge carriers with a high degree of spin polarization. So far, the electrical current flowing across the ferromagnetic 3d metal/molecule interface has been shown to exhibit a maximum spin polarization P = 74% at 10K. Yet applications require a higher P and at room temperature, using a simple 3d metal. We will present magnetotransport results showing P=89% at T=40K across the Fe/C60 interface, and P=77% at 295K across the facile Co/C interface. These new records highlight the potential of this class of spin injectors for organic optoelectronics.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Bowen "Record transport spin polarization across ferromagnetic metal/molecule interfaces", Proc. SPIE PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV, PC130130F (19 June 2024); https://doi.org/10.1117/12.3021052
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