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10 April 2024 The FabSCIL platform: 200 and 300mm full wafer NIL for nanophotonics
Marc A. Verschuuren, Bradley Williams, Mohammad Ramezani, Robert van de Laar, Jeroen Visser, Gert-Jan Hurxkens, Rob Voorkamp
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Proceedings Volume PC12956, Novel Patterning Technologies 2024; PC1295609 (2024) https://doi.org/10.1117/12.3003683
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
Nanoimprint lithography (NIL) is a technology that can deliver cost effective fabrication of patterns from 10’s of microns, down to sub-micron and nano-patterns (<10 nm) on large areas. Currently two application areas are of great interest for NIL. Accurate wafer scale overlay alignment and the reproducibility in replicating patterns with less than 1nm variation on their absolute size. This is important for nanophotonic applications such as augmented reality and metalenses. . In this contribution, we will show advanced overlay data on 200 and 300 mm wafers. A novel high contrast alignment marker set was developed and used to automatically inspect up to 70.000 cross-in-box overlay markers on a 300 mm wafer. The markers are designed to have a high contrast which enables a robust automatic pattern recognition and a ~100 nm measurement accuracy.A 200mm wafer with metalenses and blazed grating metasurface, designed at 532nm wavelength, is used to validate the sensitivity of scatterometry on the imprint mask. These metalenses are produced by imprinting a silica NanoGlass etch mask and subsequent ICP/RIE transfer etch in a niobium-pentoxide layer of 800 nm thickness.
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Marc A. Verschuuren, Bradley Williams, Mohammad Ramezani, Robert van de Laar, Jeroen Visser, Gert-Jan Hurxkens, and Rob Voorkamp "The FabSCIL platform: 200 and 300mm full wafer NIL for nanophotonics", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC1295609 (10 April 2024); https://doi.org/10.1117/12.3003683
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KEYWORDS
Semiconducting wafers
Nanoimprint lithography
Nanophotonics
Etching
Metalenses
Optical alignment
Refractive index
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