Presentation
16 March 2024 Optimization of the electron transport layer in quantum dots light emitting diodes by co-doping ZnO with gallium and magne-sium
Martin Ntwaeaborwa
Author Affiliations +
Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870R (2024) https://doi.org/10.1117/12.3009273
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Optimization of the electron transport layer in quantum dots light emitting diodes by co-doping ZnO with gallium and magnesium
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Ntwaeaborwa "Optimization of the electron transport layer in quantum dots light emitting diodes by co-doping ZnO with gallium and magne-sium", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870R (16 March 2024); https://doi.org/10.1117/12.3009273
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KEYWORDS
Zinc oxide

Gallium

Codoping

Electron transport

Magnesium

Quantum dot light emitting diodes

Nanoparticles

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