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16 March 2024 Is SCAM (ScAlMgO4) a promising oxide material, or is it just a scam?
Henryk Teisseyre, Tomasz Stefaniuk, Malgorzata Wierzbowska, Jaroslaw Z. Domagala, Andrzej Klos, Jaroslaw Kisielewski, Alexander Korneluk, Jan Suffczynski
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Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870O (2024) https://doi.org/10.1117/12.3002390
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In recent decades, GaN and related compounds gained prominence as top semiconductor materials for high-power, high-temperature optoelectronics, electronics, and power conversion. However, better substrate materials are still sought after despite extensive nitride research. Commonly used substrates like sapphire and silicon have high lattice mismatches with GaN, leading to challenges in heteroepitaxial growth. A promising solution emerged with ScAlMgO4 (SCAM) proposed as a GaN growth substrate. SCAM offers several advantages: i) Smaller lattice mismatch with GaN than sapphire, reducing dislocation density in grown structures. ii) Matching thermal expansion coefficient with GaN along the a-axis, reducing residual strain. iii) Easy cleavage along the c-plane, yielding atomically flat substrates without polishing. iv) Ability to grow large SCAM crystals via the Chochralski method. In this study1, we present experimental and theoretical investigations on the optical, electronic, and structural properties of ScAlMgO4. Our experimental techniques include variable angle spectroscopic ellipsometry, optical transmission, X-ray diffraction, scanning electron microscopy, and Raman spectrosco
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Henryk Teisseyre, Tomasz Stefaniuk, Malgorzata Wierzbowska, Jaroslaw Z. Domagala, Andrzej Klos, Jaroslaw Kisielewski, Alexander Korneluk, and Jan Suffczynski "Is SCAM (ScAlMgO4) a promising oxide material, or is it just a scam?", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870O (16 March 2024); https://doi.org/10.1117/12.3002390
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KEYWORDS
Gallium nitride
Oxides
Crystals
Sapphire
X-ray diffraction
Scanning electron microscopy
Semiconductor materials
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