Characteristics of group III-nitride films prepared by pulsed sputtering

Hiroshi Fujioka; Kohei Ueno

doi:10.1117/12.3004962

9 March 2024 Characteristics of group III-nitride films prepared by pulsed sputtering

Hiroshi Fujioka, Kohei Ueno

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288603 (2024) https://doi.org/10.1117/12.3004962
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The basic characteristics of group-III nitride films prepared by pulsed sputtering have been investigated. We have found that films prepared by sputtering shows high electron and hole mobilities. We have also found that Heavily donor-doped GaN and AlGaN showed record low resistivity. and were successfully applied to various devices such as the source/drain of AlN/AlGaN HEMTs and tunnel contacts for optical devices.

Conference Presentation

Citation Download Citation

Hiroshi Fujioka and Kohei Ueno "Characteristics of group III-nitride films prepared by pulsed sputtering", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288603 (9 March 2024); https://doi.org/10.1117/12.3004962

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