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13 March 2024 Red-emitting MECSEL based on InP quantum dots
Ana Ćutuk, Michael Jetter, Peter Michler
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Proceedings Volume PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII; PC128680B (2024) https://doi.org/10.1117/12.3002549
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
Using Quantum Dots (QDs) as active region for a semiconductor laser can be preferable for various laser properties. However, the internal strain and the fabrication of an active region membrane can alter the structure properties and, consequently, the laser emission properties as well. In this contribution, we present the emission characteristics of a MECSEL based on InP QDs and emitting in the red spectral range. We discuss the influence of different membrane fabrication methods on the laser emission and the composition of the gain region.
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Ana Ćutuk, Michael Jetter, and Peter Michler "Red-emitting MECSEL based on InP quantum dots", Proc. SPIE PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, PC128680B (13 March 2024); https://doi.org/10.1117/12.3002549
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KEYWORDS
Quantum dot emission
Semiconductor quantum dots
Laser bonding
Aluminium gallium indium phosphide
Fabrication
Gallium arsenide
Semiconductor lasers
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