Presentation
5 October 2023 Dependence of e-h pair collection efficiency on fin aspect ratio in AlGaN Fin light-emitting diodes
Author Affiliations +
Abstract
We discuss a new enhancement effect in the external quantum efficiency (EQE) of AlGaN fin light emitting diodes (LEDs) as the aspect ratio of the fin increases. We show electroluminescence results on single n-AlGaN fin/p-GaN heterojunctions that are arranged in an array format with their aspect ratio increasing from 0.2 to 3, while fin width reduces from 3000 nm to 200 nm. The UV excitonic emission of the AlGaN fins are studied as the aspect ratio increases at a fixed current density. We observe an average 7x increase in the EQE in transitioning from 3000 nm wide fins to 200 nm wide fins. This geometrical advantage allows a 200 nm wide fin to operate at 1/3rd the current density compared to a 3000 nm wide fin while generating a UV emission with a comparable power of 1 microWatt. These results show new parameters that can be used for developing brighter light sources free of efficiency droop at the micro- or nano-scale. Efficiency droop is the decline in internal quantum efficiency with increasing current density, which is one of the significant challenges facing wide bandgap LEDs.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Babak Nikoobakht "Dependence of e-h pair collection efficiency on fin aspect ratio in AlGaN Fin light-emitting diodes", Proc. SPIE PC12651, Low-Dimensional Materials and Devices 2023, PC126510E (5 October 2023); https://doi.org/10.1117/12.2681923
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KEYWORDS
Aluminum gallium nitride

Light emitting diodes

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