Two-dimensional (2d) nano-electronics, plasmonics, and spintronics require clean and local charge control, calling for layered, crystalline acceptors or donors. Here I will describe how the Relativistic Mott Insulating state of RuCl3, a 2D antiferromagnet, provides a new opportunity to introduce modulation doping into 2D materials. Specifically, we demonstrate and optimize this charge transfer with extensive Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations. Also, we find the doping is exceptionally local, can occur through hBN, and works with various exfoliated, CVD, and MBE materials. Lastly, I will provide evidence that this doping is quite distinct from what is possible in typical MBE heterostructures and can provide doping levels compatible with ionic liquids without the disorder.
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