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30 April 2023 Etch optimization for defect reduction of EUV photoresists
Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, Noriaki Oikawa
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Proceedings Volume PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII; PC1249903 (2023) https://doi.org/10.1117/12.2658971
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
As the limits of EUV single exposure direct printing are being explored there is a need for etch processes that can transfer small features and reduce defectivity. The implementation of high numerical aperture (NA) EUV scanner tool will allow for printing of sub-10 nm features in a single exposure. However, it reduces the depth of focus, thus requires thinner photoresist coatings. In preparation for high NA (0.55) we explore the etch implications of thin EUV photoresists. Here we show two different strategies for bridge defect reduction during etch and break elimination with selective deposition during the etch process.
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Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, and Noriaki Oikawa "Etch optimization for defect reduction of EUV photoresists", Proc. SPIE PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII, PC1249903 (30 April 2023); https://doi.org/10.1117/12.2658971
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KEYWORDS
Photoresist materials
Etching
Extreme ultraviolet lithography
Bridges
Printing
Metals
Oxides
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