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EUV interference lithography (EUV-IL) plays an essential role in developing photoresist materials for EUV lithography. Hitherto, the highest resolution has been achieved by diffraction gratings positioned on thin transparent membranes. Yet, these gratings are tied in with critical fabrication challenges when aiming towards the ultimate resolution at the sub-10 nm half-pitch regime. To this end, we present an EUV-IL setup based on light reflection upon two low-absorption mirrors. Combined with brilliant and coherent synchrotron light, this Lloyd’s mirror-inspired device delivers single-digit HP patterning with remarkable efficiency and throughput.
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