17 March 2023Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures
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We report our study on the enhanced light extraction efficiency (LEE) of the 280nm AlInN nanowire ultraviolet light-emitting diodes (LEDs) using different surface passivation approaches and photonic crystal structures. With a ~ 30nm Si3N4 as surface passivation, the AlInN LED could achieve relatively high LEE of ~ 41.5%, while the unpassivated LED has an average LEE of ~ 23.5%. Moreover, the periodically arranged nanowire LED arrays in hexagonal structure exhibit high LEE of 61.4% which is almost two times higher compared to that of the randomly arranged nanowire LEDs. Additionally, the AlInN nanowire ultraviolet LEDs show highly transverse-magnetic polarized emission.
Hieu Pham Trung Nguyen,Ravi Teja Velpula,Barsha Jain,Moulik Patel, andAndressa Marangon
"Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243003 (17 March 2023); https://doi.org/10.1117/12.2648003
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Hieu Pham Trung Nguyen, Ravi Teja Velpula, Barsha Jain, Moulik Patel, Andressa Marangon, "Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures," Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243003 (17 March 2023); https://doi.org/10.1117/12.2648003