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16 March 2023 High-field electron transport and microwave noise in ZnO channels with 2 dimensional electron gas (Conference Presentation)
Vitaliy S. Avrutin, Ümit Özgür, Hadis Morkoç, Linas Ardaravičius, Arthur Šimukovič, Emilis Šermukšnis
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220K (2023) https://doi.org/10.1117/12.2661416
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We studied electron transport and microwave noise in Zn-polar BeMgZnO/ZnO and O-polar ZnO/MgZnO heterostructures with 2-dimensional electron gas (2DEG) grown on c-sapphire substrates by molecular beam epitaxy. In a short-pulse (<5 ns) high-field experiment, the electron drift velocity reached 1.2E7 cm/s at an electric field up to 200 kV/cm. Pulsed microwave hot-electron noise temperature measurements near 10 GHz in O- polar channels indicate that the hot electron temperature is controlled by hot LO phonons, which increase electron temperature, whereas the presence of excess noise (over "thermal" hot-electron noise) in the Zn- polar channels suggests some inhomogeneity of BeMgZnO barriers.
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Vitaliy S. Avrutin, Ümit Özgür, Hadis Morkoç, Linas Ardaravičius, Arthur Šimukovič, and Emilis Šermukšnis "High-field electron transport and microwave noise in ZnO channels with 2 dimensional electron gas (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220K (16 March 2023); https://doi.org/10.1117/12.2661416
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KEYWORDS
Electron transport
Microwave radiation
Zinc oxide
Resistance
Temperature metrology
Heterojunctions
Molecular beam epitaxy
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