Recent progress in bulk GaN crystal growth technology

Malgorzata Iwinska; Tomasz Sochacki; Robert Kucharski; Michal Bockowski

doi:10.1117/12.2649109

21 March 2023 Recent progress in bulk GaN crystal growth technology

Malgorzata Iwinska, Tomasz Sochacki, Robert Kucharski, Michal Bockowski

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649109
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

In order to fabricate gallium nitride (GaN) substrates, bulk crystals of the highest structural quality have to be grown. Today, three GaN crystallization methods are mainly applied for this purpose: Halide Vapor Phase Epitaxy (HVPE), sodium-flux, and ammonothermal. This work will cover basic ammonothermal and HVPE crystallization of bulk GaN. Properties of crystals and substrates will be shown. Limiting factors as well as recent progress in the two approaches will be presented.

Conference Presentation

Citation Download Citation

Malgorzata Iwinska, Tomasz Sochacki, Robert Kucharski, and Michal Bockowski "Recent progress in bulk GaN crystal growth technology", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649109

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