Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs

Abdallah Ougazzaden; Suresh Sundaram; Phuong Vuong; Soufiane Karrakchou; Adama Mballo; Rajat Gujrat; Ashutosh Srivastava; Jean-Paul Salvestrini; Paul Voss; Gilles Patriarche

doi:10.1117/12.2654225

21 March 2023 Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Adama Mballo, Rajat Gujrat, Ashutosh Srivastava, Jean-Paul Salvestrini, Paul Voss, Gilles Patriarche

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2654225
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Hexagonal boron nitride (h-BN), a two-dimensional (2D) ultrawide-bandgap semiconductor, has seen fast progress in the last decade and attracted tremendous attention and intensive investigation for its association with III-Nitride heterostructures. More specifically, the weak van der Waals interactions between the III-Nitrides heterostructures and 2D h-BN layers is a major enabler because it allows a mechanical release and transfer of freestanding membranes of III-Nitrides heterostructures to foreign substrates which open new pathways for III-Nitride heterogeneous integration and flexible devices. In this talk we will present the results of our work on LEDs grown on h-BN and their transfer to foreign substrates.

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Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Adama Mballo, Rajat Gujrat, Ashutosh Srivastava, Jean-Paul Salvestrini, Paul Voss, and Gilles Patriarche "Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2654225

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