26 September 2022Ink formulations for solution-processable organic photodiodes to deposit homogeneous layers on >6-inch silicon wafers for organic CMOS image sensors
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We report ink formulations for solution-processable near-infrared organic photodiodes (OPDs) to fabricate organic CMOS image sensors on silicon wafers. The ink for the hole transport layer, which consists of cross-linkable semiconducting polymers, fully covers an 8-inch silicon wafer with less than 3 nm of variation in thickness by spin-coating. The ink is stable over several months. For the ink for the active layer, new additives are found to reduce micrometer size phase separation of donor and acceptor semiconductors after thermal annealing, which is fatal to achieve pixel to pixel reproducibility. Both inks are free from halogenated solvents.
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