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4 October 2022 Efficient spin transfert torque switching of perpendicular magnetic tunnel junctions and scaling outlook (Conference Presentation)
Ricardo C. Sousa, Daniel S. Hazen, Nuno Caçoilo, Bruno M. S. Teixeira, Alvaro Palomino Lopez, Olivier Fruchart, David Salomoni, Stéphane Auffret, Laurent Vila, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu, Bernard Dieny
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Proceedings Volume PC12205, Spintronics XV; PC122050D (2022) https://doi.org/10.1117/12.2633815
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States
Abstract
Magnetic tunnel junctions with perpendicular magnetic anisotropy for Magnetic Random Access Memory need to combine high speed and low critical switching current. Higher spin transfer torque (STT) write efficiency is required. This can be achieved introducing a switchable assistance layer, which can be designed to maximize the STT efficiency independently of the switching direction. At the same time, the assistance layer also increases the retention in standby. The reversal process was confirmed with time-resolved measurements. The outlook for scaling to the sub-20 nm diameter range will also be reviewed looking at STT driven switching in perpendicular shape anisotropy cells.
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Ricardo C. Sousa, Daniel S. Hazen, Nuno Caçoilo, Bruno M. S. Teixeira, Alvaro Palomino Lopez, Olivier Fruchart, David Salomoni, Stéphane Auffret, Laurent Vila, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu, and Bernard Dieny "Efficient spin transfert torque switching of perpendicular magnetic tunnel junctions and scaling outlook (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC122050D (4 October 2022); https://doi.org/10.1117/12.2633815
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KEYWORDS
Magnetism
Switching
Anisotropy
Temperature metrology
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