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5 March 2022 Recombination-times mismatch in spin photodiodes
Henri-Jean M. Drouhin, Viatcheslav I. Safarov, Igor V. Rozhansky, Henri Jaffrès, Yuan Lu
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Proceedings Volume PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII; PC120090L (2022) https://doi.org/10.1117/12.2615977
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Spin optoelectronics aims at interconverting photon spins to charges and has the potential to revolutionize telecommunications. Circularly-polarized light emitters rely on spin lasers whereas reciprocal devices consist of solid-state helicity detectors, the fabrication of which has remained a challenge for decades. Experimental results obtained on a spin photodiode based on a ferromagnetic-metal/GaAs tunnel junction will be presented and we will show that the helicity-dependent photocurrent is mostly determined by a dynamical factor resulting from the competition between carrier recombination in the metal and in the semiconductor. This constitutes a radical shift in the physical description of these emerging spin devices.
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Henri-Jean M. Drouhin, Viatcheslav I. Safarov, Igor V. Rozhansky, Henri Jaffrès, and Yuan Lu "Recombination-times mismatch in spin photodiodes", Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC120090L (5 March 2022); https://doi.org/10.1117/12.2615977
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KEYWORDS
Photodiodes
Sensors
Optical interconnects
Optoelectronics
Physics
Semiconductors
Solid state electronics
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