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5 March 2022 Luminescence signatures of nitrogen in β-Ga2O3 nanowires
Karin Yamamura, Liangchen Zhu, Curtis Irvine, Mandeep Singh, Vipul Bansal, John Scott, Matthew R. Phillips, Anirudh Jallandhra, Cuong Ton-That
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Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020C (2022) https://doi.org/10.1117/12.2621466
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Monoclinic β-Ga2O3 nanowires were fabricated using chemical vapor deposition and doped with nitrogen using remote plasma. The monoclinic phase and high crystallinity of the nanowires were confirmed by XRD and TEM, while nitrogen incorporation into the nanowires was confirmed by X-ray absorption and Raman spectroscopies. Temperature-resolved cathodoluminescence characterisation revealed a green luminescence band at 2.5 eV due to the N incorporation. The UV emission at 3.4 eV associated with self-trapped holes and its temperature-dependant behaviour were found to be identical for the undoped and N-doped nanowires. The experimental findings will be discussed in context of theoretical calculations for N-doped Ga2O3.
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Karin Yamamura, Liangchen Zhu, Curtis Irvine, Mandeep Singh, Vipul Bansal, John Scott, Matthew R. Phillips, Anirudh Jallandhra, and Cuong Ton-That "Luminescence signatures of nitrogen in β-Ga2O3 nanowires", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020C (5 March 2022); https://doi.org/10.1117/12.2621466
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KEYWORDS
Nanowires
Nitrogen
Luminescence
Raman spectroscopy
Gallium
X-ray diffraction
Spectroscopy
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