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In this work, we study the internal quantum efficiency and the lasing threshold of AlGaN/GaN heterostructures designed for UV laser emission. We discuss the effect of carrier diffusion and carrier localization in the optical properties at low and room temperature. The implementation of a graded-index separate confinement heterostructure results in enhanced carrier collection, reducing the lasing threshold. However, this improvement is not correlated with the internal quantum efficiency of the samples.
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Sergi Cuesta Arcos, Lou Denaix, Quang Minh Thai, Edith Bellet-Amalric, Catherine Bougerol, Stephen T. Purcell, Le Si Dang, Eva Monroy, "Study of the optical properties of AlGaN/GaN separate confinement heterostructures for low-threshold e-beam pumped UV lasers," Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200118 (5 March 2022); https://doi.org/10.1117/12.2606355