Paper
19 October 2016 Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL
Author Affiliations +
Abstract
Traditional pupil optimization for horizontal dark field two-bar building blocks yields a dipole matching its local pitch. This classical “rule” guides the placement for the illumination into a pupil area of high contrast and exposure latitude. However under these illumination conditions the feature exhibits an extremely large relative CD Bossung separation limiting its overlapping process window. Here we show experimentally that contrast-aware source optimization is necessary to lift this relative separation. The Tachyon-generated pupil applied is a very close replica of a rigorously obtained asymmetric illumination solution. The latter has emerged out of a study which evidenced that the formation of this rigorous pupil can be traced back to the interdependency of CD Bossung formation and symmetry of the intensity spectrum across the diffraction orders. Compared to standard D90Y and leaf shape illumination, the optimized pupil provides the highest simulated contrast, and experimentally obtained highest depth-of-focus and lowest pattern shift range. Finally we compare the consequences of intensity balancing versus phase aberration minimization across the diffraction orders and conclude that the balancing of the intensity spectrum is the main responsible factor for lifting the feature’s CD Bossung asymmetry and separation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Last, Z. Wang, P. van Adrichem, L. de Winter, and J. Finders "Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL", Proc. SPIE 9985, Photomask Technology 2016, 99850W (19 October 2016); https://doi.org/10.1117/12.2240862
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diffraction

Critical dimension metrology

Source mask optimization

Extreme ultraviolet lithography

Photomicroscopy

Extreme ultraviolet

3D image processing

RELATED CONTENT

Low-n mask progressing insights: focus on isolated features
Proceedings of SPIE (December 01 2022)
N7 dark field two bar in 0.33NA EUVL Mitigation...
Proceedings of SPIE (March 24 2017)
Impact of EUV SRAF on Bossung tilt
Proceedings of SPIE (March 24 2017)
Optimizations aspects for EUV low k1 logic with the low...
Proceedings of SPIE (October 13 2021)

Back to Top