Paper
1 August 2016 Charge transfer efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing
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Abstract
It is important to understand the impact of the space radiation environment on detector performance, thereby ensuring that the optimal operating conditions are selected for use in flight. The best way to achieve this is by irradiating the device using appropriate mission operating conditions, i.e. holding the device at mission operating temperature with the device powered and clocking. This paper describes the Charge Transfer Efficiency (CTE) measurements made using an e2v technologies p-channel CCD204 irradiated using protons to the 10 MeV equivalent fluence of 1.24×109 protons.cm-2 at 153 K. The device was held at 153 K for a period of 7 days after the irradiation before being allowed up to room temperature where it was held at rest, i.e. unbiased, for twenty six hours to anneal before being cooled back to 153 K for further testing, this was followed by a further one week and three weeks of room temperature annealing each separated by further testing. A comparison to results from a previous room temperature irradiation of an n-channel CCD204 is made using assumptions of a factor of two worse CTE when irradiated under cryogenic conditions which indicate that p-channel CCDs offer improved tolerance to radiation damage when irradiated under cryogenic conditions.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. D. Gow, N. J. Murray, D. Wood, D. Burt, D. J. Hall, B. Dryer, and A. D. Holland "Charge transfer efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150L (1 August 2016); https://doi.org/10.1117/12.2232684
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KEYWORDS
Charge-coupled devices

X-rays

Temperature metrology

Cryogenics

Silicon

X-ray imaging

Annealing

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