VCSELs with optically controlled current confinement: experiments and analysis

Sven Bader; Philipp Gerlach; Rainer Michalzik

doi:10.1117/12.2228090

28 April 2016 VCSELs with optically controlled current confinement: experiments and analysis

Sven Bader, Philipp Gerlach, Rainer Michalzik

Author Affiliations +

Proceedings Volume 9892, Semiconductor Lasers and Laser Dynamics VII; 989208 (2016) https://doi.org/10.1117/12.2228090
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

We have devised a novel oxide-free and regrowth-free approach for optically controlled current conﬁnement in vertical-cavity surface-emitting lasers (VCSELs). This is realized with a monolithically integrated phototransistor (PT), which is conﬁgured as an optical switch and embedded between the two Bragg reﬂectors. We have fabricated functional PT-VCSELs by one-step epitaxial growth plus metal deposition with diﬀerent top contact sizes. We present light–current–voltage characteristics of the lasers as well as a simple theoretical model explaining the occurrence of a distinct turn-on point and clarify epitaxial design requirements to reach strong optically controlled current conﬁnement.

Citation Download Citation

Sven Bader, Philipp Gerlach, and Rainer Michalzik "VCSELs with optically controlled current confinement: experiments and analysis", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 989208 (28 April 2016); https://doi.org/10.1117/12.2228090

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