Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

Dan Gao; Bo Liu; Zhen Xu; Heng Wang; Yangyang Xia; Lei Wang; Nanfei Zhu; Ying Li; Yipeng Zhan; Zhitang Song; Songlin Feng

doi:10.1117/12.2245062

12 October 2016 Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

Dan Gao, Bo Liu, Zhen Xu, Heng Wang, Yangyang Xia, Lei Wang, Nanfei Zhu, Ying Li, Yipeng Zhan, Zhitang Song, Songlin Feng

Author Affiliations +

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180I (2016) https://doi.org/10.1117/12.2245062
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO₂ on the performance of TiN, both TiN/SiO₂, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO₂ and there exist a thin (~4 nm) oxidation interfacial layer between TiN and SiO₂. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

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Dan Gao, Bo Liu, Zhen Xu, Heng Wang, Yangyang Xia, Lei Wang, Nanfei Zhu, Ying Li, Yipeng Zhan, Zhitang Song, and Songlin Feng "Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180I (12 October 2016); https://doi.org/10.1117/12.2245062

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