Sub 20nm particle inspection on EUV mask blanks

Peter Bussink; Jean-Baptiste Volatier; Peter van der Walle; Erik Fritz; Jacques van der Donck

doi:10.1117/12.2219058

8 March 2016 Sub 20nm particle inspection on EUV mask blanks

Peter Bussink, Jean-Baptiste Volatier, Peter van der Walle, Erik Fritz, Jacques van der Donck

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 977835 (2016) https://doi.org/10.1117/12.2219058
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The sensitivity of this system has been improved by model based design. Our model identified two parameters that could be tuned to be able to detect smaller particles. The first step is a multi azimuth illumination mode and the second parameter is the illumination wavelength. Here we report on the results of the Rapid Nano 4, which has both of these parameters optimized to have a sub 20 nm LSE detection limit on EUV mask blanks.

Citation Download Citation

Peter Bussink, Jean-Baptiste Volatier, Peter van der Walle, Erik Fritz, and Jacques van der Donck "Sub 20nm particle inspection on EUV mask blanks", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977835 (8 March 2016); https://doi.org/10.1117/12.2219058

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