The first and third aspects are accomplished through an APC system that uses measurements from production lots to generate CPE corrections that are dynamically applied to future lots. The drawback of this method is that production overlay sampling must be extremely high in order to provide the system with enough data to generate CPE. That drawback makes IM particularly difficult because of the throughput impact that can be created on expensive bottleneck photolithography process tools. The goal is to realize the cycle time and feedback benefits of IM coupled with the enhanced overlay correction capability of automated CPE without impacting process tool throughput. This paper will discuss the development of a system that sends measured data with reduced sampling via an optimized layout to the exposure tool’s computational modelling platform to predict and create “upsampled” overlay data in a customizable output layout that is compatible with the fab user CPE APC system. The result is dynamic CPE without the burden of extensive measurement time, which leads to increased utilization of IM. |
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CITATIONS
Cited by 1 scholarly publication.
Overlay metrology
Lithium
Data modeling
Metrology
Semiconducting wafers
Computing systems
Time metrology