Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

Taiichi Otsuji; Kenta Sugawara; Gen Tamamushi; Adrian Dobroiu; Tetsuya Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; Shigeru Kuwano; Jun-ichi Kani; Jun Terada

doi:10.1117/12.2209211

12 February 2016 Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, Jun Terada

Author Affiliations +

Proceedings Volume 9772, Broadband Access Communication Technologies X; 977204 (2016) https://doi.org/10.1117/12.2209211
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

Citation Download Citation

Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, and Jun Terada "Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems", Proc. SPIE 9772, Broadband Access Communication Technologies X, 977204 (12 February 2016); https://doi.org/10.1117/12.2209211

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