Paper
4 March 2016 Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models
M. Gladysiewicz, I. Ivashev, M. S. Wartak
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Abstract
We report on possible consequences of alloying of GaAs with GaBi or InBi on band structure and material gain of quantum wells. Typical considered structure consists of 8nm wide GaAsBi quantum well on GaAs substrate. Our analysis is performed using 8-band and 14-band kp models. The obtained results indicate that for GaInAsBi/InP quantum well with 5% of Bi it might be possible to achieve emission wavelengths around 4 μm .
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Gladysiewicz, I. Ivashev, and M. S. Wartak "Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974218 (4 March 2016); https://doi.org/10.1117/12.2208366
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KEYWORDS
Bismuth

Quantum wells

Gallium arsenide

Systems modeling

Chemical species

Optical properties

Electrons

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