Paper
22 December 2015 Modeling of graphene nanoscroll conductance with quantum capacitance effect
Author Affiliations +
Proceedings Volume 9668, Micro+Nano Materials, Devices, and Systems; 96683V (2015) https://doi.org/10.1117/12.2202579
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2015, Sydney, New South Wales, Australia
Abstract
Graphene nanoscrolls (GNSs) as a new category of quasi one dimensional belong to the carbon-based nanomaterials, which have recently captivated the attention of researchers. The latest discoveries of exceptional structural and electronic properties of GNSs like, high mobility, controllable band gap and tunable core size has become a new stimuli for nanotechnology researchers. Fundamental descriptions about structure and electronic properties of GNSs have been investigated in order to apply them in nanoelectronic applications like nanotransistors and nanosensors as a new semiconducting material. By utilizing a novel approach, the analytical conductance model (G) of GNSs with the effect of Hall quantum is derived. This letter introduces a geometrydependent model to analyze the conductance of GNSs. The conductance modeling of GNS in parabolic part of the band structure which displays minimum conductance near the charge neutrality point is calculated. Subsequently, the effect of temperature and physical parameters on GNS conductivity is studied. This study emphasized that the GNS is a promising candidate for new generation of nanoelectronic devices.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohsen Khaledian and Razali Ismail "Modeling of graphene nanoscroll conductance with quantum capacitance effect", Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96683V (22 December 2015); https://doi.org/10.1117/12.2202579
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Graphene

Carbon

Nanoelectronics

Capacitance

Transistors

Field effect transistors

Semiconductors

Back to Top