Paper
23 October 2015 A study of reticle CD behavior for inter-area pattern loading difference
Sungjin Kim, Kweonjae Lee, Jongsuk Yim, Hyunjoong Kim, Sukwhan Kim, Sukho Shin, Woosun Choi, Jinhee Jung, Kyungwha Chun, Inja Lee, Jooyoung Lee, Hyeongsun Hong, Gyoyoung Jin
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Abstract
We can control the pattern on wafer without optimization of layout design if we understand reticle cd behavior
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungjin Kim, Kweonjae Lee, Jongsuk Yim, Hyunjoong Kim, Sukwhan Kim, Sukho Shin, Woosun Choi, Jinhee Jung, Kyungwha Chun, Inja Lee, Jooyoung Lee, Hyeongsun Hong, and Gyoyoung Jin "A study of reticle CD behavior for inter-area pattern loading difference", Proc. SPIE 9635, Photomask Technology 2015, 96351U (23 October 2015); https://doi.org/10.1117/12.2196988
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KEYWORDS
Photomasks

Semiconducting wafers

Optical lithography

Manufacturing

Reticles

Critical dimension metrology

Quality measurement

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