Paper
1 May 2015 Circuit modeling based optimization of high speed carrier depletion silicon modulators
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Abstract
Simple RC model, which only considered PN junction capacitance and series resistor, and complete circuit model considering parasitic capacitances of a carrier depletion based optical modulators are studied. Modulation efficiency and bandwidth of the modulators are investigated using analytical models and numerical simulations respectively. Through particle swarm optimization (PSO) a repetitive algorithm is applied to find the feasible maximum of circuit bandwidth.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seyedreza Hosseini and Kambiz Jamshidi "Circuit modeling based optimization of high speed carrier depletion silicon modulators ", Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160N (1 May 2015); https://doi.org/10.1117/12.2178603
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Cited by 1 scholarly publication.
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KEYWORDS
Electro optical modeling

Modulators

Circuit switching

Optical modulators

Modulation

Silicon

Doping

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