Characterization Of An Experimental Thin-Film Interconnection Structure.

G. Arjavalingam; P. May; J.-M. Halbout; G. V. Kopcsay

doi:10.1117/12.947458

8 September 1988 Characterization Of An Experimental Thin-Film Interconnection Structure.

G. Arjavalingam, P. May, J.-M. Halbout, G. V. Kopcsay

Proceedings Volume 0947, Interconnection of High Speed and High Frequency Devices and Systems; (1988) https://doi.org/10.1117/12.947458
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Measurements and simulation of high-speed pulse propagation and cross-talk on an experimental thin-film transmission line structure are presented. The measurements are carried out using both an optoelectronic pulse generation and detection technique, and a recently developed non-contact high-speed sampling method based on a picosecond electron beam. We find through simulation that a quasi-static coupled transmission line model with frequency dependent skin-effect loss accurately predicts the pulse delay and distortion characteristics of our sample.

Citation Download Citation

G. Arjavalingam, P. May, J.-M. Halbout, and G. V. Kopcsay "Characterization Of An Experimental Thin-Film Interconnection Structure.", Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); https://doi.org/10.1117/12.947458

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