Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits

D. N. Zubov; E. A. Kelm; R. A. Milovanov; G. Molodtsova

doi:10.1117/12.2181191

18 December 2014 Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits

D. N. Zubov, E. A. Kelm, R. A. Milovanov, G. Molodtsova

Author Affiliations +

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400N (2014) https://doi.org/10.1117/12.2181191
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contact pads might be damaged due to different factors. In present work several types of damaged contact pads and experimental investigations on its reconstructions by electrochemical deposition of silver and copper are discussed.

Citation Download Citation

D. N. Zubov, E. A. Kelm, R. A. Milovanov, and G. Molodtsova "Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400N (18 December 2014); https://doi.org/10.1117/12.2181191

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