Paper
20 March 2015 Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography
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Abstract
Negative tone development (NTD) has dramatically gained popularity in 193 nm dry and immersion lithography, due to their superior imaging performance [1, 2 and 3].

Popular negative tone developers are organic solvents such as n- butyl acetate (n-BA), aliphatic ketones, or high-density alcohols such as Methyl Isobutyl Carbinol (MIBC). In this work, a comparative study between ultra-high molecular weight polyethylene (UPE) and polytetrafluoroethylene (PTFE) POU filtration for n-BA based NTD has been carried out.

Results correlate with the occurrence or the mitigation of micro bridges in a 45 nm dense line pattern created through immersion lithography as a function of POU membrane.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. D'Urzo, P. Foubert, H. Stokes, Y. Thouroude, A. Xia, and Aiwen Wu "Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251J (20 March 2015); https://doi.org/10.1117/12.2185599
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KEYWORDS
Extreme ultraviolet

Particles

Lithography

Extreme ultraviolet lithography

Immersion lithography

Metals

Semiconducting wafers

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